IXTP10P50P

Specifications

Terminal Sayısı

3

Direnç

1Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

PolarP™

Pulsed Drain Currentmax Idm

30A

Vgsth Max Id

4V @ 250μA

Drain To Source Voltage Vdss

500V

Power Dissipation Max

300W Tc

JESD-609 Kodu

e3

Kurşunsuz Kodu

yes

Additional Feature

AVALANCHE RATED

Fet Type

P-Channel

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

10A

Parça Durumu

Active

Transistor Element Material

SILICON

Jedec95 Code

TO-220AB

Input Capacitance Ciss Max Vds

2840pF @ 25V

Gate Charge Qg Max Vgs

50nC @ 10V

Operating Mode

ENHANCEMENT MODE

Rise Time

28ns

Fabrika Tedarik Süresi

17 Weeks

Ambalaj

Tube

Rds On Max Id Vgs

1 Ω @ 5A, 10V

Fall Time Typ

44 ns

Montaj Tipi

Through Hole

Yayın Yılı

2009

Turn Off Delay Time

52 ns

Gate To Source Voltage Vgs

20V

Element Configuration

Single

Drain To Source Breakdown Voltage

-500V

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Pin Sayısı

3

Number Of Elements

1

Radyasyon Dayanımı

No

Transistor Application

SWITCHING

Montaj

Through Hole

Current Continuous Drain Id25

10A Tc