IXTP08N100P

Specifications

Mounting

Through Hole

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Eu Rohs

Compliant with Exemption

Yayın Yılı

2009

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Element Configuration

Single

Maximum Drain Source Voltage V

1000

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Maximum Drain Source Resistance Mohm

20000@10V

Typical Gate Charge Vgs Nc

11.3@10V

Qualification Status

Not Qualified

Typical Fall Time Ns

34

Case Connection

DRAIN

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

11.3

Current Continuous Drain Id25

800mA Tc

Kılıf / Paket

TO-220-3

ECCN Kodu

EAR99

Montaj

Through Hole

Additional Feature

AVALANCHE RATED

Maximum Power Dissipation Mw

42000

Supplier Package

TO-220

Terminal Sayısı

3

Typical Input Capacitance Vds Pf

240@25V

Drain Currentmax Abs Id

0.8A

Vgsth Max Id

4V @ 50μA

Channel Type

N

Channel Mode

Enhancement

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

Polar™

Maximum Operating Temperature C

150

Gate Charge Qg Max Vgs

11.3nC @ 10V

Fall Time Typ

34 ns

Rds On Max Id Vgs

20 Ω @ 500mA, 10V

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

24 Weeks