IXTP08N100D2

Specifications

Terminal Sayısı

3

Typical Input Capacitance Vds Pf

325@25V

Channel Type

N

Channel Mode

Depletion

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maximum Power Dissipation Mw

60000

Supplier Package

TO-220AB

Kurşunsuz

Lead Free

Maximum Operating Temperature C

150

Gate Charge Qg Max Vgs

14.6nC @ 5V

Rds On Max Id Vgs

21 Ω @ 400mA, 0V

Fabrika Tedarik Süresi

24 Weeks

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Eu Rohs

Compliant with Exemption

Yayın Yılı

2009

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Element Configuration

Single

Mounting

Through Hole

Pin Sayısı

3

Fet Feature

Depletion Mode

Number Of Elements Per Chip

1

Kılıf / Paket

TO-220-3

Current Continuous Drain Id25

800mA Tc

Montaj

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Maximum Drain Source Voltage V

1000

Vgs Max

±20V

Qualification Status

Not Qualified

Typical Gate Charge Vgs Nc

14.6@5V

Maximum Drain Source Resistance Mohm

21000@0V

Typical Fall Time Ns

48

Case Connection

DRAIN

Svhc Exceeds Threshold

Yes

Typical Turnoff Delay Time Ns

34

Minimum Operating Temperature C

-55

Drain To Source Voltage Vdss

1000V

Hts

8541.29.00.95

Maximum Continuous Drain Current A

0.8(Min)