IXTP05N100M

Specifications

Input Capacitance Ciss Max Vds

260pF @ 25V

Gate Charge Qg Max Vgs

7.8nC @ 10V

Fabrika Tedarik Süresi

24 Weeks

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Rds On Max Id Vgs

17 Ω @ 375mA, 10V

Montaj Tipi

Through Hole

Continuous Drain Current Id

700mA

REACH Uyumluluk Kodu

unknown

Drive Voltage Max Rds On Min Rds On

10V

Parça Durumu

Active

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Jedec95 Code

TO-220AB

JESD-609 Kodu

e1

Power Dissipation Max

25W Tc

Kurşunsuz Kodu

yes

Additional Feature

AVALANCHE RATED

Fet Type

N-Channel

Terminal Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

3A

Vgsth Max Id

4.5V @ 25μA

Drain To Source Voltage Vdss

1000V

Drain Currentmax Abs Id

0.7A

Vgs Max

±30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

ISOLATED

Qualification Status

Not Qualified

Terminal Kaplaması

TIN SILVER COPPER

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Through Hole

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

1000V

Kılıf / Paket

TO-220-3

Current Continuous Drain Id25

700mA Tc

Avalanche Energy Rating Eas

100 mJ

Pin Sayısı

3