IXTP01N100D

Specifications

Mounting

Through Hole

Pin Sayısı

3

Fet Feature

Depletion Mode

Vds Drainsource Breakdown Voltage

1 kV

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Element Configuration

Single

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Eu Rohs

Compliant

Yayın Yılı

2001

Maximum Drain Source Resistance Mohm

80000@0V

Typical Gate Charge Vgs Nc

5.8@5V

Typical Fall Time Ns

64

Case Connection

DRAIN

Maximum Drain Source Voltage V

1000

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Kılıf / Paket

TO-220-3

Current Continuous Drain Id25

100mA Tc

Vgs Gatesource Voltage

- 20 V, + 20 V

ECCN Kodu

EAR99

Montaj

Through Hole

Number Of Elements Per Chip

1

Radyasyon Dayanımı

No

Id Continuous Drain Current

400 mA

Supplier Package

TO-220AD

Qg Gate Charge

5.8 nC

Maximum Power Dissipation Mw

1100

Channel Type

N

Channel Mode

Depletion

Technology

Si

Material

Si

Seri

IXTP01N100

Nem Hassasiyeti (MSL)

Not Applicable

Terminal Sayısı

3

Typical Input Capacitance Vds Pf

100@25V

Rds On Max Id Vgs

110 Ω @ 50mA, 0V

Pd Power Dissipation

25 W

Fabrika Tedarik Süresi

8 Weeks