IXTN60N50L2

Specifications

Kurşunsuz Kodu

yes

Power Dissipation Max

735W Tc

Fet Type

N-Channel

Pulsed Drain Currentmax Idm

150A

Drain To Source Voltage Vdss

500V

Input Capacitance Ciss Max Vds

24000pF @ 25V

Ambalaj

Tube

Montaj Tipi

Chassis Mount

Continuous Drain Current Id

53A

Terminal Formu

UNSPECIFIED

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Avalanche Energy Rating Eas

3000 mJ

Number Of Elements

1

Power Dissipation

735W

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Nickel (Ni)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

500V

Transistor Application

SWITCHING

Nominal Vgs

2.5 V

Additional Feature

UL RECOGNIZED

Terminal Sayısı

4

Seri

Linear L2™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain Currentmax Abs Id

30A

Vgsth Max Id

4.5V @ 250μA

Gate Charge Qg Max Vgs

610nC @ 10V

Drainsource On Resistancemax

0.1Ohm

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

28 Weeks

Rds On Max Id Vgs

100m Ω @ 30A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Terminal Pozisyonu

UPPER

Pin Sayısı

4

Yayın Yılı

2009

Pin Sayısı

4