IXTN46N50L

Specifications

Maximum Drain Source Voltage V

500

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±30V

Typical Fall Time Ns

42

Typical Gate Charge Vgs Nc

260@15V

Maximum Drain Source Resistance Mohm

160@20V

Case Connection

ISOLATED

Radyasyon Dayanımı

No

Number Of Elements Per Chip

1

Kılıf / Paket

SOT-227-4, miniBLOC

Current Continuous Drain Id25

46A Tc

Montaj

Chassis Mount, Panel, Screw

Mounting

Screw

Pin Sayısı

4

Gate To Source Voltage Vgs

30V

Pin Sayısı

4

Eu Rohs

Compliant with Exemption

Yayın Yılı

2007

Category

Power MOSFET

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Maximum Operating Temperature C

150

Yükseklik

9.6mm

Gate Charge Qg Max Vgs

260nC @ 15V

Rds On Max Id Vgs

160m Ω @ 500mA, 20V

Fall Time Typ

42 ns

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

28 Weeks

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

20V

Terminal Pozisyonu

UPPER

Additional Feature

AVALANCHE RATED

Maximum Power Dissipation Mw

700000

Supplier Package

SOT-227B

Terminal Sayısı

4

Typical Input Capacitance Vds Pf

7000@25V

Vgsth Max Id

6V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Channel Mode

Enhancement

Channel Type

N