IXTN30N100L

Specifications

Terminal Kaplaması

Nickel (Ni)

Configuration

SINGLE WITH BUILT-IN DIODE

Pcb Changed

4

Power Dissipation

800W

Typical Rise Time Ns

70

Transistor Application

SWITCHING

Number Of Elements

1

Ppap

No

Avalanche Energy Rating Eas

2000 mJ

Maximum Gate Source Voltage V

±30

Typical Turnon Delay Time Ns

36

Drain To Source Breakdown Voltage

1kV

Turn Off Delay Time

100 ns

Montaj Tipi

Chassis Mount

Rise Time

70ns

Ambalaj

Bulk

Input Capacitance Ciss Max Vds

13700pF @ 25V

Svhc

Yes

Package Length

38.23(Max)

Parça Durumu

Active

Package Width

25.42(Max)

Transistor Element Material

SILICON

Terminal Formu

UNSPECIFIED

Eccn Us

EAR99

Continuous Drain Current Id

30A

Automotive

No

Fet Type

N-Channel

Maximum Continuous Drain Current A

30

Hts

8541.29.00.95

Power Dissipation Max

800W Tc

Kurşunsuz Kodu

yes

Drain To Source Voltage Vdss

1000V

Minimum Operating Temperature C

-55

Pulsed Drain Currentmax Idm

70A

Direnç

450MOhm

Typical Turnoff Delay Time Ns

100

Typical Fall Time Ns

78

Maximum Drain Source Resistance Mohm

450@20V

Typical Gate Charge Vgs Nc

545@20V

Svhc Exceeds Threshold

Yes