IXTN200N10L2

Specifications

Çalışma Sıcaklığı

-55°C~150°C TJ

Maximum Drain Source Voltage V

100

Vgs Max

±20V

Typical Fall Time Ns

27

Qualification Status

Not Qualified

Typical Gate Charge Vgs Nc

540@10V

Maximum Drain Source Resistance Mohm

11@10V

Svhc Exceeds Threshold

Yes

Case Connection

ISOLATED

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

540

Kılıf / Paket

SOT-227-4, miniBLOC

Current Continuous Drain Id25

178A Tc

Montaj

Chassis Mount

ECCN Kodu

EAR99

Mounting

Screw

Pin Sayısı

4

Gate To Source Voltage Vgs

20V

Pin Sayısı

4

Eu Rohs

Compliant with Exemption

Yayın Yılı

2010

Category

Power MOSFET

RoHS Durumu

ROHS3 Compliant

Maximum Operating Temperature C

150

Gate Charge Qg Max Vgs

540nC @ 10V

Rds On Max Id Vgs

11m Ω @ 100A, 10V

Fabrika Tedarik Süresi

28 Weeks

Operating Mode

ENHANCEMENT MODE

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Terminal Pozisyonu

UPPER

Additional Feature

AVALANCHE RATED, UL RECOGNIZED

Maximum Power Dissipation Mw

830000

Maximum Gate Threshold Voltage V

4.5

Supplier Package

SOT-227

Terminal Sayısı

4

Typical Input Capacitance Vds Pf

23000@25V

Vgsth Max Id

4.5V @ 3mA

Maximum Gate Source Leakage Current Na

200

Seri

Linear L2™