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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- RoHS Compliant
- Drain To Source Breakdown Voltage
- 55V
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 5
- Turn Off Delay Time
- 63 ns
- Yayın Yılı
- 2007
- Number Of Elements
- 2
- Fet Feature
- Standard
- Pin Sayısı
- 5
- Avalanche Energy Rating Eas
- 1000 mJ
- Kılıf / Paket
- ISOPLUSi5-Pak™
- Max Power Dissipation
- 150W
- Montaj
- Through Hole
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Qualification Status
- Not Qualified
- Configuration
- COMPLEX
- Case Connection
- ISOLATED
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Power Dissipation
- 150W
- Drain To Source Voltage Vdss
- 55V
- Vgsth Max Id
- 4V @ 250μA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Seri
- TrenchMV™
- Terminal Sayısı
- 5
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fet Type
- 2 N-Channel (Dual)
- Additional Feature
- AVALANCHE RATED
- Kurşunsuz Kodu
- yes
- Parça Durumu
- Obsolete
- Terminal Pozisyonu
- SINGLE
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Continuous Drain Current Id
- 140A
- Rds On Max Id Vgs
- 4.4m Ω @ 50A, 10V
- Montaj Tipi
- Through Hole
- Fall Time Typ
- 75 ns
- Rise Time
- 54ns
- Operating Mode
- ENHANCEMENT MODE
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