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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Additional Feature
- AVALANCHE RATED
- Kurşunsuz Kodu
- yes
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fet Type
- 2 N-Channel (Dual)
- Terminal Sayısı
- 5
- Drain To Source Voltage Vdss
- 75V
- Vgsth Max Id
- 4V @ 250μA
- Pulsed Drain Currentmax Idm
- 600A
- Seri
- TrenchMV™
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 165nC @ 10V
- Input Capacitance Ciss Max Vds
- 7700pF @ 25V
- Montaj Tipi
- Through Hole
- Fall Time Typ
- 47 ns
- Rds On Max Id Vgs
- 5.5m Ω @ 50A, 10V
- Ambalaj
- Tube
- Rise Time
- 65ns
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 120A
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Transistor Element Material
- SILICON
- Parça Durumu
- Obsolete
- Terminal Pozisyonu
- SINGLE
- Avalanche Energy Rating Eas
- 1000 mJ
- Number Of Elements
- 2
- Pin Sayısı
- 5
- Fet Feature
- Standard
- Pin Sayısı
- 5
- Yayın Yılı
- 2007
- Turn Off Delay Time
- 55 ns
- Drain To Source Breakdown Voltage
- 75V
- RoHS Durumu
- RoHS Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Power Dissipation
- 150W
- Qualification Status
- Not Qualified
- Case Connection
- ISOLATED
- Configuration
- COMPLEX
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Max Power Dissipation
- 150W
- Kılıf / Paket
- ISOPLUSi5-Pak™
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