IXTL2X180N10T

Specifications

Montaj Tipi

Through Hole

Fall Time Typ

31 ns

Rds On Max Id Vgs

7.4m Ω @ 50A, 10V

Ambalaj

Tube

Fabrika Tedarik Süresi

30 Weeks

Rise Time

54ns

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.0074Ohm

Gate Charge Qg Max Vgs

151nC @ 10V

Input Capacitance Ciss Max Vds

6900pF @ 25V

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Terminal Pozisyonu

SINGLE

Continuous Drain Current Id

100A

Kurşunsuz

Lead Free

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fet Type

2 N-Channel (Dual)

Additional Feature

AVALANCHE RATED

Kurşunsuz Kodu

yes

Drain To Source Voltage Vdss

100V

Vgsth Max Id

4.5V @ 250μA

Seri

Trench™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

5

Qualification Status

Not Qualified

Case Connection

ISOLATED

Configuration

COMPLEX

Çalışma Sıcaklığı

-55°C~175°C TJ

Power Dissipation

150W

Max Power Dissipation

150W

Kılıf / Paket

ISOPLUSi5-Pak™

Montaj

Through Hole

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

2

Pin Sayısı

5

Fet Feature

Standard

RoHS Durumu

ROHS3 Compliant