IXTK22N100L

Specifications

Maximum Gate Source Voltage V

±30

Number Of Elements

1

Ppap

No

Tab

Tab

Turn Off Delay Time

80 ns

Typical Turnon Delay Time Ns

36

Drain To Source Breakdown Voltage

1kV

Turn On Delay Time

36 ns

Pcb Changed

3

Power Dissipation

700W

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Configuration

Single

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Typical Rise Time Ns

35

Uzunluk

19.96mm

Transistor Application

SWITCHING

Maximum Continuous Drain Current A

22

Kurşunsuz Kodu

yes

Power Dissipation Max

700W Tc

JESD-609 Kodu

e1

Fet Type

N-Channel

Automotive

No

Direnç

600Ohm

Typical Turnoff Delay Time Ns

80

Minimum Operating Temperature C

-55

Drain To Source Voltage Vdss

1000V

Pulsed Drain Currentmax Idm

50A

Input Capacitance Ciss Max Vds

7050pF @ 25V

Montaj Tipi

Through Hole

Ambalaj

Tube

Rise Time

35ns

Continuous Drain Current Id

22A

Package Length

19.96(Max)

Package Height

26.16(Max)

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Genişlik

5.13mm

Package Width

5.13(Max)

Parça Durumu

Active

Mounting

Through Hole