IXTK20N150

Specifications

Supplier Package

TO-264AA

Maximum Gate Threshold Voltage V

4.5

Maximum Power Dissipation Mw

1250000

Additional Feature

AVALANCHE RATED

Channel Type

N

Channel Mode

Enhancement

Technology

Si

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maximum Gate Source Leakage Current Na

200

Vgsth Max Id

4.5V @ 1mA

Typical Input Capacitance Vds Pf

7800@25V

Terminal Sayısı

3

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

28 Weeks

Rds On Max Id Vgs

1 Ω @ 10A, 10V

Gate Charge Qg Max Vgs

215nC @ 10V

Drainsource On Resistancemax

1Ohm

Maximum Operating Temperature C

150

Terminal Pozisyonu

SINGLE

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Mounting

Through Hole

Vds Drainsource Breakdown Voltage

1.5 kV

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Jesd30 Code

R-PSFM-T3

Eu Rohs

Compliant with Exemption

Yayın Yılı

2012

Case Connection

DRAIN

Maximum Drain Source Resistance Mohm

1000@10V

Typical Gate Charge Vgs Nc

215@10V

Typical Fall Time Ns

33

Vgs Max

±30V

Maximum Drain Source Voltage V

1500

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj

Through Hole

Current Continuous Drain Id25

20A Tc

Kılıf / Paket

TO-264-3, TO-264AA

Id Continuous Drain Current

20 A

Typical Gate Charge10v Nc

215