IXTK120N65X2

Specifications

Supplier Package

TO-264

Maximum Gate Threshold Voltage V

5

Maximum Power Dissipation Mw

1250000

Maximum Gate Source Leakage Current Na

100

Vgsth Max Id

4.5V @ 8mA

Channel Type

N

Channel Mode

Enhancement

Nem Hassasiyeti (MSL)

1 (Unlimited)

Typical Input Capacitance Vds Pf

13600@25V

Rds On Max Id Vgs

24m Ω @ 60A, 10V

Fabrika Tedarik Süresi

15 Weeks

Maximum Operating Temperature C

150

Gate Charge Qg Max Vgs

240nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Mounting

Through Hole

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Category

Power MOSFET

Yayın Yılı

2015

Eu Rohs

Compliant with Exemption

Maximum Drain Source Resistance Mohm

23@10V

Typical Gate Charge Vgs Nc

230@10V

Typical Fall Time Ns

10

Çalışma Sıcaklığı

-55°C~150°C TJ

Maximum Drain Source Voltage V

650

Vgs Max

±30V

Current Continuous Drain Id25

120A Tc

Kılıf / Paket

TO-264-3, TO-264AA

ECCN Kodu

EAR99

Montaj

Through Hole

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

230

Fet Type

N-Channel

Automotive

No

Maximum Continuous Drain Current A

120

Maximum Idss Ua

50

Power Dissipation Max

1250W Tc

Minimum Operating Temperature C

-55

Drain To Source Voltage Vdss

650V

Typical Turnoff Delay Time Ns

87