IXTK110N20L2

Specifications

Ds Breakdown Voltagemin

200V

Transistor Application

AMPLIFIER

ECCN Kodu

EAR99

Montaj

Through Hole

Current Continuous Drain Id25

110A Tc

Kılıf / Paket

TO-264-3, TO-264AA

Radyasyon Dayanımı

No

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

TIN SILVER COPPER

Power Dissipation

960W

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSFM-T3

Yayın Yılı

2009

Pin Sayısı

3

Number Of Elements

1

Avalanche Energy Rating Eas

5000 mJ

Transistor Element Material

SILICON

Parça Durumu

Active

Terminal Pozisyonu

SINGLE

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

110A

Kurşunsuz

Lead Free

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

28 Weeks

Montaj Tipi

Through Hole

Rds On Max Id Vgs

24m Ω @ 55A, 10V

Gate Charge Qg Max Vgs

500nC @ 10V

Input Capacitance Ciss Max Vds

23000pF @ 25V

Drainsource On Resistancemax

0.024Ohm

Pulsed Drain Currentmax Idm

275A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

Linear L2™

Vgsth Max Id

4.5V @ 3mA

Drain To Source Voltage Vdss

200V

Terminal Sayısı

3

Fet Type

N-Channel