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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Additional Feature
- AVALANCHE RATED
- Power Dissipation Max
- 520W Tc
- Fet Type
- N-Channel
- Terminal Sayısı
- 3
- Drain To Source Voltage Vdss
- 200V
- Vgsth Max Id
- 4V @ 250μA
- Seri
- Linear™
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 180nC @ 10V
- Input Capacitance Ciss Max Vds
- 6160pF @ 25V
- Montaj Tipi
- Through Hole
- Rds On Max Id Vgs
- 32m Ω @ 40A, 10V
- Ambalaj
- Tube
- Fabrika Tedarik Süresi
- 17 Weeks
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 80A
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kurşunsuz
- Lead Free
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Terminal Pozisyonu
- SINGLE
- Avalanche Energy Rating Eas
- 2500 mJ
- Number Of Elements
- 1
- Pin Sayısı
- 3
- Pin Sayısı
- 3
- Yayın Yılı
- 2010
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Vgs Max
- ±20V
- Qualification Status
- Not Qualified
- Case Connection
- DRAIN
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Current Continuous Drain Id25
- 80A Tc
- Kılıf / Paket
- TO-247-3
- Ds Breakdown Voltagemin
- 200V
- Transistor Application
- SWITCHING
- Montaj
- Through Hole
- ECCN Kodu
- EAR99
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