IXTH76P10T

Specifications

Eccn Us

EAR99

Continuous Drain Current Id

76A

Package Width

5.3(Max)

Parça Durumu

Active

Transistor Element Material

SILICON

Package Length

16.26(Max)

Package Height

21.46(Max)

Svhc

Yes

Input Capacitance Ciss Max Vds

13700pF @ 25V

Ambalaj

Tube

Montaj Tipi

Through Hole

Typical Turnoff Delay Time Ns

52

Pulsed Drain Currentmax Idm

230A

Drain To Source Voltage Vdss

100V

Minimum Operating Temperature C

-55

Power Dissipation Max

298W Tc

JESD-609 Kodu

e1

Kurşunsuz Kodu

yes

Maximum Continuous Drain Current A

76

Hts

8541.29.00.95

Automotive

No

Fet Type

P-Channel

Transistor Application

SWITCHING

Typical Rise Time Ns

40

Power Dissipation

298W

Pcb Changed

3

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Tab

Tab

Typical Turnon Delay Time Ns

25

Maximum Gate Source Voltage V

±15

Ppap

No

Number Of Elements

1

Drive Voltage Max Rds On Min Rds On

10V

Terminal Pozisyonu

SINGLE

Process Technology

TrenchP

Gate Charge Qg Max Vgs

197nC @ 10V

Maximum Operating Temperature C

150

Drainsource On Resistancemax

0.024Ohm

Fabrika Tedarik Süresi

17 Weeks