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IXTH6N150

IXYS

IXTH6N150

Single MOSFETs Transistors

RoHS: Compliant

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Compliant

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Specifications

Typical Rise Time Ns
20
Minimum Operating Temperature C
-55
Pcb Changed
3
Additional Feature
AVALANCHE RATED
Kılıf / Paket
TO-247-3
Kurşunsuz Kodu
yes
Gate Charge Qg Max Vgs
67nC @ 10V
Typical Fall Time Ns
38
Pin Sayısı
3
Package Height
21.46(Max)
Eu Rohs
Compliant with Exemption
Svhc Exceeds Threshold
Yes
Eccn Us
EAR99
Power Dissipation Max
540W Tc
Avalanche Energy Rating Eas
500 mJ
Drive Voltage Max Rds On Min Rds On
10V
Maximum Drain Source Voltage V
1500
Pulsed Drain Currentmax Idm
24A
Number Of Elements
1
Yayın Yılı
2012
Çalışma Sıcaklığı
-55°C~150°C TJ
Drain To Source Voltage Vdss
1500V
Typical Turnoff Delay Time Ns
50
Terminal Sayısı
3
Ambalaj
Tube
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Pozisyonu
SINGLE
Fet Type
N-Channel
Montaj
Through Hole
Qualification Status
Not Qualified
Typical Gate Charge Vgs Nc
67@10V
Hts
8541.29.00.95
Kurşunsuz
Lead Free
Case Connection
DRAIN
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Configuration
SINGLE WITH BUILT-IN DIODE
Ppap
No
JESD-609 Kodu
e1
Operating Mode
ENHANCEMENT MODE
Typical Input Capacitance Vds Pf
2230@25V

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