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IXTH6N120

IXYS

IXTH6N120

Single MOSFETs Transistors

RoHS: Compliant

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Specifications

Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Configuration
Single
Power Dissipation
300W
Fet Type
N-Channel
Montaj
Through Hole
Qualification Status
Not Qualified
Hts
8541.29.00.95
Typical Gate Charge Vgs Nc
56@10V
Kurşunsuz
Lead Free
Drain To Source Breakdown Voltage
1.2kV
Case Connection
DRAIN
Avalanche Energy Rating Eas
500 mJ
Power Dissipation Max
300W Tc
Maximum Drain Source Voltage V
1200
Drive Voltage Max Rds On Min Rds On
10V
Rise Time
33ns
Number Of Elements
1
Pulsed Drain Currentmax Idm
24A
Typical Turnoff Delay Time Ns
42
Drain To Source Voltage Vdss
1200V
REACH Uyumluluk Kodu
not_compliant
Çalışma Sıcaklığı
-55°C~150°C TJ
Yayın Yılı
2004
Terminal Sayısı
3
Ambalaj
Tube
Typical Rise Time Ns
33
Pcb Changed
3
Additional Feature
AVALANCHE RATED
Minimum Operating Temperature C
-55
Kılıf / Paket
TO-247-3
Kurşunsuz Kodu
yes
Typical Fall Time Ns
18
Pin Sayısı
3
Gate Charge Qg Max Vgs
56nC @ 10V
Package Height
21.46(Max)
Svhc Exceeds Threshold
Yes
Eu Rohs
Compliant with Exemption
Channel Mode
Enhancement
Continuous Drain Current Id
6A
Nem Hassasiyeti (MSL)
1 (Unlimited)

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