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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 4.5V @ 250μA
- Mounting
- Through Hole
- Number Of Elements Per Chip
- 1
- Fabrika Tedarik Süresi
- 28 Weeks
- Typical Gate Charge10v Nc
- 60
- Fall Time Typ
- 22 ns
- Svhc
- Yes
- ECCN Kodu
- EAR99
- Rds On Max Id Vgs
- 50m Ω @ 500mA, 10V
- Montaj Tipi
- Through Hole
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Maximum Drain Source Resistance Mohm
- 50@10V
- Current Continuous Drain Id25
- 52A Tc
- Parça Durumu
- Active
- Typical Input Capacitance Vds Pf
- 2845@25V
- Operating Mode
- ENHANCEMENT MODE
- JESD-609 Kodu
- e1
- Ppap
- No
- Pin Sayısı
- 3
- Channel Type
- P
- Category
- Power MOSFET
- Maximum Operating Temperature C
- 150
- Input Capacitance Ciss Max Vds
- 2845pF @ 25V
- Element Configuration
- Single
- Maximum Gate Source Voltage V
- ±20
- Direnç
- 50MOhm
- Tab
- Tab
- Continuous Drain Current Id
- 52A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Maximum Power Dissipation Mw
- 300000
- Channel Mode
- Enhancement
- Transistor Element Material
- SILICON
- Package Length
- 16.26(Max)
- Gate To Source Voltage Vgs
- 20V
- Turn Off Delay Time
- 38 ns
- Automotive
- No
- Transistor Application
- SWITCHING
- Vgs Max
- ±20V
- RoHS Durumu
- ROHS3 Compliant
- Package Width
- 5.3(Max)
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