IXTH50P10

Specifications

Ambalaj

Tube

Terminal Sayısı

3

Typical Turnoff Delay Time Ns

86

Drain To Source Voltage Vdss

100V

Polarity

P

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2008

Number Of Elements

1

Rise Time

39ns

Tip

Power MOSFET

Pulsed Drain Currentmax Idm

200A

Maximum Drain Source Voltage V

100

Drive Voltage Max Rds On Min Rds On

10V

Eccn Us

EAR99

Power Dissipation Max

300W Tc

Svhc Exceeds Threshold

Yes

Eu Rohs

Compliant with Exemption

Package Height

21.46(Max)

Typical Fall Time Ns

38

Pin Sayısı

3

Gate Charge Qg Max Vgs

140nC @ 10V

Kurşunsuz Kodu

yes

Kılıf / Paket

TO-247-3

Gatesource Voltage Max

±20(V)

Minimum Operating Temperature C

-55

Pcb Changed

3

Additional Feature

AVALANCHE RATED

Typical Rise Time Ns

39

Drainsource On Resistancemax

0.055Ohm

Drainsource Onvolt

100(V)

Power Dissipation

300W

Configuration

Single

Operating Temperature Classification

Military

Case Connection

DRAIN

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

-100V

Hts

8541.21.00.95

Typical Gate Charge Vgs Nc

140@10V

Montaj

Through Hole

Fet Type

P-Channel