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Support
Technical team support
Specifications
- Vgsth Max Id
- 4V @ 250μA
- Fabrika Tedarik Süresi
- 28 Weeks
- Drive Voltage Max Rds On Min Rds On
- 10V
- Power Dissipation Max
- 300W Tc
- Fall Time Typ
- 16 ns
- Rds On Max Id Vgs
- 45m Ω @ 25A, 10V
- ECCN Kodu
- EAR99
- Ambalaj
- Tube
- Montaj Tipi
- Through Hole
- Terminal Sayısı
- 3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2000
- Current Continuous Drain Id25
- 50A Tc
- Number Of Elements
- 1
- Parça Durumu
- Active
- Rise Time
- 15ns
- Pulsed Drain Currentmax Idm
- 200A
- Nominal Vgs
- 4 V
- Kılıf / Paket
- TO-247-3
- Voltage Rated Dc
- 200V
- Operating Mode
- ENHANCEMENT MODE
- Akım Değeri
- 50A
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 220nC @ 10V
- Seri
- MegaMOS™
- Kurşunsuz Kodu
- yes
- Input Capacitance Ciss Max Vds
- 4600pF @ 25V
- Element Configuration
- Single
- Direnç
- 45mOhm
- Continuous Drain Current Id
- 50A
- Power Dissipation
- 300W
- Transistor Element Material
- SILICON
- Gate To Source Voltage Vgs
- 20V
- Turn Off Delay Time
- 72 ns
- Montaj
- Through Hole
- Dual Supply Voltage
- 200V
- Transistor Application
- SWITCHING
- Vgs Max
- ±20V
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