IXTH460P2

Specifications

Supplier Package

TO-247

Jesd30 Code

R-PSFM-T3

Package Width

5.3(Max)

Maximum Continuous Drain Current A

24

RoHS Durumu

ROHS3 Compliant

Automotive

No

Transistor Application

SWITCHING

Vgs Max

±30V

Gate To Source Voltage Vgs

30V

Package Length

16.26(Max)

Transistor Element Material

SILICON

Channel Mode

Enhancement

Maximum Power Dissipation Mw

480000

Ds Breakdown Voltagemin

500V

Continuous Drain Current Id

24A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tab

Tab

Maximum Gate Source Voltage V

±30

Input Capacitance Ciss Max Vds

2890pF @ 25V

Category

Power MOSFET

Maximum Operating Temperature C

150

Radyasyon Dayanımı

No

Pin Sayısı

3

Channel Type

N

Ppap

No

JESD-609 Kodu

e1

Technology

Si

Operating Mode

ENHANCEMENT MODE

Typical Input Capacitance Vds Pf

2890@25V

Parça Durumu

Active

Current Continuous Drain Id25

24A Tc

Maximum Drain Source Resistance Mohm

270@10V

Montaj Tipi

Through Hole

Rds On Max Id Vgs

270m Ω @ 12A, 10V

Vds Drainsource Breakdown Voltage

500 V

Svhc

Yes

Typical Gate Charge10v Nc

48

Fabrika Tedarik Süresi

28 Weeks

Rds On Drainsource Resistance

270 mOhms

Vgsth Max Id

4.5V @ 250μA