IXTH40N50L2

Specifications

Transistor Element Material

SILICON

Package Length

16.26(Max)

Tab

Tab

Maximum Gate Source Voltage V

±20

Maximum Power Dissipation Mw

540000

Ds Breakdown Voltagemin

500V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

40A

Channel Mode

Enhancement

RoHS Durumu

ROHS3 Compliant

Package Width

5.3(Max)

Maximum Continuous Drain Current A

40

Typical Turnon Delay Time Ns

50

Reach Svhc

No SVHC

Supplier Package

TO-247AD

Transistor Application

SWITCHING

Vgs Max

±20V

Automotive

No

ECCN Kodu

EAR99

Rds On Max Id Vgs

170m Ω @ 20A, 10V

Montaj Tipi

Through Hole

Maximum Drain Source Resistance Mohm

170@10V

Current Continuous Drain Id25

40A Tc

Parça Durumu

Active

Vgsth Max Id

4.5V @ 250μA

Mounting

Through Hole

Number Of Elements Per Chip

1

Typical Gate Charge10v Nc

320

Svhc

Yes

Radyasyon Dayanımı

No

Pin Sayısı

3

Channel Type

N

Input Capacitance Ciss Max Vds

10400pF @ 25V

Category

Power MOSFET

Maximum Operating Temperature C

150

Nominal Vgs

2.5 V

Operating Mode

ENHANCEMENT MODE

Typical Input Capacitance Vds Pf

10400@25V

JESD-609 Kodu

e1

Ppap

No