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IXTH30N50L2

IXYS

IXTH30N50L2

Single MOSFETs Transistors

RoHS: Compliant

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Specifications

Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Configuration
Single
Power Dissipation
400W
Montaj
Through Hole
Qualification Status
Not Qualified
Typical Gate Charge Vgs Nc
240@10V
Threshold Voltage
2.5V
Fet Type
N-Channel
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Case Connection
DRAIN
Kurşunsuz
Lead Free
Drain To Source Breakdown Voltage
500V
Maximum Drain Source Voltage V
500
Drive Voltage Max Rds On Min Rds On
10V
Maximum Gate Source Leakage Current Na
100
Avalanche Energy Rating Eas
1500 mJ
Power Dissipation Max
400W Tc
Terminal Sayısı
3
Ambalaj
Tube
Rise Time
117ns
Number Of Elements
1
Pulsed Drain Currentmax Idm
60A
Typical Turnoff Delay Time Ns
94
Çalışma Sıcaklığı
-55°C~150°C TJ
Yayın Yılı
2001
Minimum Operating Temperature C
-55
Pcb Changed
3
Additional Feature
AVALANCHE RATED
Kılıf / Paket
TO-247-3
Drainsource On Resistancemax
0.2Ohm
Typical Rise Time Ns
117
Package Height
21.46(Max)
Svhc Exceeds Threshold
Yes
Eu Rohs
Compliant with Exemption
Kurşunsuz Kodu
yes
Seri
Linear L2™
Typical Fall Time Ns
40
Pin Sayısı
3
Gate Charge Qg Max Vgs
240nC @ 10V
Maximum Gate Source Voltage V
±20

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