IXTH300N04T2

Specifications

Case Connection

DRAIN

Qualification Status

Not Qualified

Montaj

Through Hole

Typical Gate Charge Vgs Nc

145@10V

Process Technology

TrenchFET

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Configuration

SINGLE WITH BUILT-IN DIODE

Id Continuous Drain Current

300 A

Transistor Polarity

N-Channel

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Package Height

21.46(Max)

Svhc Exceeds Threshold

Yes

Eu Rohs

Compliant with Exemption

Kurşunsuz Kodu

yes

Seri

TrenchT2™

Typical Fall Time Ns

13

Gate Charge Qg Max Vgs

145nC @ 10V

Minimum Operating Temperature C

-55

Pcb Changed

3

Additional Feature

AVALANCHE RATED

Kılıf / Paket

TO-247-3

Typical Rise Time Ns

17

Drainsource On Resistancemax

0.0025Ohm

Montaj Stili

Through Hole

Terminal Sayısı

3

Ambalaj

Tube

Number Of Elements

1

Pulsed Drain Currentmax Idm

900A

Typical Turnoff Delay Time Ns

32

Drain To Source Voltage Vdss

40V

Çalışma Sıcaklığı

-55°C~175°C TJ

Yayın Yılı

2008

Maximum Drain Source Voltage V

40

Maximum Gate Source Leakage Current Na

200

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

600 mJ

Power Dissipation Max

480W Tc

Maximum Continuous Drain Current A

300