IXTH130N20T

Specifications

Gate Charge Qg Max Vgs

150nC @ 10V

Typical Fall Time Ns

22

Kurşunsuz Kodu

yes

Seri

TrenchHV™

Eu Rohs

Compliant with Exemption

Svhc Exceeds Threshold

Yes

Package Height

21.46(Max)

Typical Rise Time Ns

18

Drainsource On Resistancemax

0.016Ohm

Kılıf / Paket

TO-247-3

Minimum Operating Temperature C

-55

Pcb Changed

3

Additional Feature

AVALANCHE RATED

Yayın Yılı

2007

Çalışma Sıcaklığı

-55°C~175°C TJ

Drain To Source Voltage Vdss

200V

Typical Turnoff Delay Time Ns

57

Pulsed Drain Currentmax Idm

320A

Number Of Elements

1

Ambalaj

Tube

Terminal Sayısı

3

Power Dissipation Max

830W Tc

Avalanche Energy Rating Eas

1000 mJ

Drive Voltage Max Rds On Min Rds On

10V

Maximum Drain Source Voltage V

200

Kurşunsuz

Lead Free

Case Connection

DRAIN

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Typical Gate Charge Vgs Nc

150@10V

Hts

8541.29.00.95

Qualification Status

Not Qualified

Montaj

Through Hole

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

8800pF @ 25V

Maximum Operating Temperature C

175

Category

Power MOSFET

Channel Type

N