IXTH12N150

Specifications

Maximum Power Dissipation Mw

890000

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

12A

Channel Mode

Enhancement

Tab

Tab

Maximum Gate Source Voltage V

±30

Package Length

16.26(Max)

Gate To Source Voltage Vgs

30V

Transistor Element Material

SILICON

Vgs Max

±30V

Transistor Application

SWITCHING

Automotive

No

Typical Turnon Delay Time Ns

26

Jesd30 Code

R-PSFM-T3

Jedec95 Code

TO-247AD

Supplier Package

TO-247AD

RoHS Durumu

ROHS3 Compliant

Maximum Gate Threshold Voltage V

4.5

Maximum Continuous Drain Current A

12

Package Width

5.3(Max)

Typical Gate Charge10v Nc

106

Vds Drainsource Breakdown Voltage

1.5 kV

Svhc

Yes

Fabrika Tedarik Süresi

28 Weeks

Rds On Drainsource Resistance

2 Ohms

Number Of Elements Per Chip

1

Mounting

Through Hole

Vgsth Max Id

4.5V @ 250μA

Maximum Drain Source Resistance Mohm

2200@10V

Maximum Idss Ua

25

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

12A Tc

Parça Durumu

Active

Rds On Max Id Vgs

2 Ω @ 6A, 10V

ECCN Kodu

EAR99

Montaj Tipi

Through Hole

Technology

Si

Ppap

No

Operating Mode

ENHANCEMENT MODE

Typical Input Capacitance Vds Pf

3720@25V