IXTH11P50

Specifications

Parça Durumu

Active

Current Continuous Drain Id25

11A Tc

Maximum Idss Ua

200

Maximum Drain Source Resistance Mohm

750@10V

Montaj Tipi

Through Hole

Rds On Max Id Vgs

750m Ω @ 5.5A, 10V

ECCN Kodu

EAR99

Svhc

Yes

Maximum Diode Forward Voltage V

3

Fall Time Typ

35 ns

Typical Gate Charge10v Nc

130

Minimum Gate Threshold Voltage V

3

Vgsth Max Id

5V @ 250μA

Mounting

Through Hole

Number Of Elements Per Chip

1

Fabrika Tedarik Süresi

17 Weeks

Maximum Operating Temperature C

150

Category

Power MOSFET

Input Capacitance Ciss Max Vds

4700pF @ 25V

Typical Reverse Transfer Capacitance Vds Pf

187@25V

Channel Type

P

Pin Sayısı

3

Radyasyon Dayanımı

No

Ppap

No

Akım Değeri

-11A

Typical Input Capacitance Vds Pf

4700@25V

Voltage Rated Dc

-500V

Typical Gate To Source Charge Nc

30

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

20V

Typical Reverse Recovery Time Ns

500

Package Length

16.26(Max)

Typical Output Capacitance Pf

500

Transistor Element Material

SILICON

Channel Mode

Enhancement

Continuous Drain Current Id

11A

Maximum Power Dissipation Mw

300000

Maximum Gate Source Voltage V

±20

Lead Shape

Through Hole

Direnç

750MOhm