IXTA80N10T

Specifications

Transistor Element Material

SILICON

Package Length

10.41(Max)

Gate To Source Voltage Vgs

20V

Element Configuration

Single

Maximum Gate Source Voltage V

±20

Tab

Tab

Continuous Drain Current Id

80A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maximum Power Dissipation Mw

230000

Channel Mode

Enhancement

RoHS Durumu

ROHS3 Compliant

Package Width

9.4(Max)

Maximum Continuous Drain Current A

80

Typical Turnon Delay Time Ns

31

Supplier Package

D2PAK

Jesd30 Code

R-PSSO-G2

Turn Off Delay Time

40 ns

Automotive

Unknown

Transistor Application

SWITCHING

Vgs Max

±20V

ECCN Kodu

EAR99

Rds On Max Id Vgs

14m Ω @ 25A, 10V

Montaj Tipi

Surface Mount

Maximum Drain Source Resistance Mohm

14@10V

Current Continuous Drain Id25

80A Tc

Parça Durumu

Active

Vgsth Max Id

5V @ 100μA

Mounting

Surface Mount

Number Of Elements Per Chip

1

Fabrika Tedarik Süresi

28 Weeks

Fall Time Typ

48 ns

Typical Gate Charge10v Nc

60

Channel Type

N

Radyasyon Dayanımı

No

Pin Sayısı

4

Maximum Operating Temperature C

175

Category

Power MOSFET

Input Capacitance Ciss Max Vds

3040pF @ 25V

Typical Input Capacitance Vds Pf

3040@25V

Operating Mode

ENHANCEMENT MODE