IXTA56N15T

Specifications

Channel Type

N

Pin Sayısı

4

Input Capacitance Ciss Max Vds

2250pF @ 25V

Maximum Operating Temperature C

175

Category

Power MOSFET

Operating Mode

ENHANCEMENT MODE

Typical Input Capacitance Vds Pf

2250@25V

Ppap

No

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

36m Ω @ 28A, 10V

ECCN Kodu

EAR99

Parça Durumu

Active

Current Continuous Drain Id25

56A Tc

Maximum Drain Source Resistance Mohm

36@10V

Maximum Idss Ua

5

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fabrika Tedarik Süresi

21 Weeks

Number Of Elements Per Chip

1

Mounting

Surface Mount

Vgsth Max Id

4.5V @ 250μA

Typical Gate Charge10v Nc

34

Maximum Continuous Drain Current A

56

Package Width

9.65(Max)

RoHS Durumu

ROHS3 Compliant

Maximum Gate Threshold Voltage V

5

Jesd30 Code

R-PSSO-G2

Supplier Package

TO-263AA

Typical Turnon Delay Time Ns

16

Vgs Max

±30V

Transistor Application

SWITCHING

Automotive

No

Transistor Element Material

SILICON

Package Length

10.29(Max)

Tab

Tab

Maximum Gate Source Voltage V

±20

Channel Mode

Enhancement

Maximum Power Dissipation Mw

300000

Ds Breakdown Voltagemin

150V

Continuous Drain Current Id

56A