IXTA36N30P

Specifications

Vgs Max

±30V

Transistor Application

SWITCHING

Automotive

No

Turn Off Delay Time

97 ns

Jesd30 Code

R-PSSO-G2

Supplier Package

D2PAK

Typical Turnon Delay Time Ns

24

Package Width

9.65(Max)

Maximum Continuous Drain Current A

36

RoHS Durumu

ROHS3 Compliant

Channel Mode

Enhancement

Nem Hassasiyeti (MSL)

3 (168 Hours)

Continuous Drain Current Id

36A

Maximum Power Dissipation Mw

300000

Maximum Gate Source Voltage V

±30

Direnç

110MOhm

Tab

Tab

Element Configuration

Single

Gate To Source Voltage Vgs

30V

Package Length

10.41(Max)

Transistor Element Material

SILICON

Ppap

No

JESD-609 Kodu

e3

Typical Input Capacitance Vds Pf

2250@25V

Operating Mode

ENHANCEMENT MODE

Category

Power MOSFET

Maximum Operating Temperature C

150

Input Capacitance Ciss Max Vds

2250pF @ 25V

Pin Sayısı

4

Channel Type

N

Fall Time Typ

28 ns

Typical Gate Charge10v Nc

70

Vgsth Max Id

5.5V @ 250μA

Mounting

Surface Mount

Number Of Elements Per Chip

1

Fabrika Tedarik Süresi

28 Weeks

Current Continuous Drain Id25

36A Tc

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Maximum Drain Source Resistance Mohm

110@10V