IXTA26P20P

Specifications

Maximum Drain Source Resistance Mohm

170@10V

Parça Durumu

Active

Current Continuous Drain Id25

26A Tc

Rds On Max Id Vgs

170m Ω @ 13A, 10V

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Typical Gate Charge10v Nc

56

Fall Time Typ

21 ns

Svhc

Yes

Fabrika Tedarik Süresi

28 Weeks

Number Of Elements Per Chip

1

Mounting

Surface Mount

Vgsth Max Id

4V @ 250μA

Input Capacitance Ciss Max Vds

2740pF @ 25V

Maximum Operating Temperature C

150

Category

Power MOSFET

Channel Type

P

Radyasyon Dayanımı

No

Pin Sayısı

4

JESD-609 Kodu

e3

Ppap

No

Operating Mode

ENHANCEMENT MODE

Typical Input Capacitance Vds Pf

2740@25V

Package Length

10.41(Max)

Gate To Source Voltage Vgs

20V

Transistor Element Material

SILICON

Maximum Power Dissipation Mw

300000

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

26A

Channel Mode

Enhancement

Element Configuration

Single

Tab

Tab

Maximum Gate Source Voltage V

±20

Typical Turnon Delay Time Ns

18

Supplier Package

D2PAK

Jesd30 Code

R-PSSO-G2

RoHS Durumu

ROHS3 Compliant

Package Width

9.65(Max)

Maximum Continuous Drain Current A

26

Turn Off Delay Time

46 ns