IXTA18P10T

Specifications

Maximum Power Dissipation Mw

83000

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

18A

Ds Breakdown Voltagemin

100V

Channel Mode

Enhancement

Tab

Tab

Maximum Gate Source Voltage V

±15

Package Length

10.29(Max)

Transistor Element Material

SILICON

Vgs Max

±15V

Transistor Application

SWITCHING

Automotive

No

Typical Turnon Delay Time Ns

19

Jesd30 Code

R-PSSO-G2

Supplier Package

TO-263AA

RoHS Durumu

ROHS3 Compliant

Maximum Continuous Drain Current A

18

Package Width

9.65(Max)

Typical Gate Charge10v Nc

39

Vds Drainsource Breakdown Voltage

100 V

Rds On Drainsource Resistance

120 mOhms

Fabrika Tedarik Süresi

28 Weeks

Mounting

Surface Mount

Vgsth Max Id

4.5V @ 250μA

Number Of Elements Per Chip

1

Maximum Drain Source Resistance Mohm

120@10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Current Continuous Drain Id25

18A Tc

ECCN Kodu

EAR99

Rds On Max Id Vgs

120m Ω @ 9A, 10V

Montaj Tipi

Surface Mount

Technology

Si

JESD-609 Kodu

e3

Ppap

No

Operating Mode

ENHANCEMENT MODE

Typical Input Capacitance Vds Pf

2100@25V

Input Capacitance Ciss Max Vds

2100pF @ 25V

Maximum Operating Temperature C

150

Category

Power MOSFET