IXTA16N50P

Specifications

Turn Off Delay Time

70 ns

Automotive

No

Vgs Max

±30V

Transistor Application

SWITCHING

Typical Turnon Delay Time Ns

23

Supplier Package

D2PAK

Jesd30 Code

R-PSSO-G2

RoHS Durumu

ROHS3 Compliant

Package Width

9.65(Max)

Maximum Continuous Drain Current A

16

Continuous Drain Current Id

16A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maximum Power Dissipation Mw

300000

Channel Mode

Enhancement

Element Configuration

Single

Maximum Gate Source Voltage V

±30

Tab

Tab

Package Length

10.41(Max)

Gate To Source Voltage Vgs

30V

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Akım Değeri

16A

Ppap

No

Voltage Rated Dc

500V

Typical Input Capacitance Vds Pf

2480@25V

Operating Mode

ENHANCEMENT MODE

Category

Power MOSFET

Maximum Operating Temperature C

150

Input Capacitance Ciss Max Vds

2250pF @ 25V

Pin Sayısı

4

Radyasyon Dayanımı

No

Channel Type

N

Fall Time Typ

25 ns

Typical Gate Charge10v Nc

43

Number Of Elements Per Chip

1

Mounting

Surface Mount

Vgsth Max Id

5.5V @ 250μA

Fabrika Tedarik Süresi

28 Weeks

Maximum Drain Source Resistance Mohm

400@10V

Current Continuous Drain Id25

16A Tc