IXTA14N60P

Specifications

Vgsth Max Id

5.5V @ 250μA

Fabrika Tedarik Süresi

28 Weeks

Fall Time Typ

26 ns

Polaritychannel Type

P-CHANNEL

Rds On Max Id Vgs

550m Ω @ 7A, 10V

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

14A Tc

Parça Durumu

Active

Voltage Rated Dc

600V

Operating Mode

ENHANCEMENT MODE

JESD-609 Kodu

e3

Akım Değeri

14A

Pin Sayısı

4

Input Capacitance Ciss Max Vds

2500pF @ 25V

Element Configuration

Single

Continuous Drain Current Id

14A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

30V

Turn Off Delay Time

70 ns

Vgs Max

±30V

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

900 mJ

Power Dissipation Max

300W Tc

Ambalaj

Tube

Terminal Sayısı

2

REACH Uyumluluk Kodu

not_compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2009

Rise Time

27ns

Number Of Elements

1

Pulsed Drain Currentmax Idm

42A

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature

AVALANCHE RATED

Drainsource On Resistancemax

0.55Ohm

Pin Sayısı

3