IXTA100N04T2

Specifications

Automotive

Unknown

Transistor Application

SWITCHING

Vgs Max

±20V

Turn Off Delay Time

15.8 ns

Package Width

9.65(Max)

Maximum Continuous Drain Current A

100

RoHS Durumu

ROHS3 Compliant

Supplier Package

D2PAK

Jesd30 Code

R-PSSO-G2

Typical Turnon Delay Time Ns

12

Maximum Gate Source Voltage V

±20

Tab

Tab

Element Configuration

Single

Channel Mode

Enhancement

Continuous Drain Current Id

100A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maximum Power Dissipation Mw

150000

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

20V

Package Length

10.41(Max)

Typical Input Capacitance Vds Pf

2690@25V

Operating Mode

ENHANCEMENT MODE

Ppap

Unknown

Technology

Si

JESD-609 Kodu

e3

Channel Type

N

Pin Sayısı

4

Maximum Operating Temperature C

175

Category

Power MOSFET

Input Capacitance Ciss Max Vds

2690pF @ 25V

Number Of Elements Per Chip

1

Mounting

Surface Mount

Vgsth Max Id

4V @ 250μA

Rds On Drainsource Resistance

7 mOhms

Fabrika Tedarik Süresi

28 Weeks

Vds Drainsource Breakdown Voltage

40 V

Typical Gate Charge10v Nc

25.5

Fall Time Typ

6.4 ns

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

7m Ω @ 25A, 10V