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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2002
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Weight
- 4.500005g
- Parça Durumu
- Obsolete
- Number Of Elements
- 1
- Gateemitter Thr Voltagemax
- 6V
- Ambalaj
- Tube
- Gateemitter Voltagemax
- 20V
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 2
- Polaritychannel Type
- N-CHANNEL
- Switching Energy
- 5mJ (off)
- Power Max
- 300W
- Max Power Dissipation
- 300W
- Temel Parça No
- IXS*35N120
- Kurşunsuz Kodu
- yes
- Turn On Time
- 67 ns
- Pin Sayısı
- 3
- Current Collector Pulsed Icm
- 140A
- Collectoremitter Saturation Voltage
- 3.6V
- Turn Off Timenom Toff
- 580 ns
- JESD-609 Kodu
- e3
- Collectoremitter Breakdown Voltage
- 1.2kV
- Giriş Tipi
- Standard
- Td Onoff25c
- 36ns/160ns
- Collector Emitter Voltage Vceo
- 1.2kV
- Kılıf / Paket
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Gate Charge
- 120nC
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Test Conditions
- 960V, 35A, 5 Ω, 15V
- Element Configuration
- Single
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Jesd30 Code
- R-PSSO-G2
- RoHS Durumu
- RoHS Compliant
- Voltage Collector Emitter Breakdown Max
- 1200V
- Case Connection
- COLLECTOR
- Vceon Max Vge Ic
- 3.6V @ 15V, 35A
- Terminal Kaplaması
- Matte Tin (Sn)
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