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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Igbt Type
- PT
- Max Collector Current
- 160A
- Qualification Status
- Not Qualified
- Montaj
- Through Hole
- Transistor Application
- POWER CONTROL
- Vceon Max Vge Ic
- 2.5V @ 15V, 80A
- Case Connection
- COLLECTOR
- RoHS Durumu
- RoHS Compliant
- Element Configuration
- Single
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Test Conditions
- 480V, 80A, 2.7 Ω, 15V
- Transistor Element Material
- SILICON
- Gate Charge
- 240nC
- Kılıf / Paket
- TO-264-3, TO-264AA
- Additional Feature
- LOW SATURATION VOLTAGE
- Turn Off Timenom Toff
- 450 ns
- Collectoremitter Saturation Voltage
- 2.5V
- Td Onoff25c
- 60ns/140ns
- Collector Emitter Voltage Vceo
- 600V
- Giriş Tipi
- Standard
- Collectoremitter Breakdown Voltage
- 600V
- Pin Sayısı
- 3
- Turn On Time
- 120 ns
- Current Collector Pulsed Icm
- 300A
- Max Power Dissipation
- 500W
- Pin Sayısı
- 3
- Temel Parça No
- IXS*80N60
- Kurşunsuz Kodu
- yes
- Power Max
- 500W
- Switching Energy
- 4.2mJ (off)
- Polaritychannel Type
- N-CHANNEL
- Gateemitter Thr Voltagemax
- 8V
- Ambalaj
- Tube
- Gateemitter Voltagemax
- 20V
- Montaj Tipi
- Through Hole
- Terminal Sayısı
- 3
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Yayın Yılı
- 2003
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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