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IXGX82N120A3

IXYS

IXGX82N120A3

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$41.22
  • 10+ pcs$38.88
  • 100+ pcs$36.68
  • 500+ pcs$34.61

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Same-day dispatch from stock

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RoHS

Compliant

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Technical team support

Specifications

Transistor Application
POWER CONTROL
Current Collector Pulsed Icm
580A
Jesd30 Code
R-PSIP-T3
Switching Energy
5.5mJ (on), 12.5mJ (off)
Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Active
Pin Sayısı
3
Terminal Sayısı
3
Td Onoff25c
34ns/265ns
RoHS Durumu
ROHS3 Compliant
Gateemitter Voltagemax
20V
Transistor Element Material
SILICON
Turn Off Timenom Toff
1590 ns
Collectoremitter Breakdown Voltage
1.2kV
Giriş Tipi
Standard
Ambalaj
Tube
Terminal Pozisyonu
SINGLE
Seri
GenX3™
Configuration
SINGLE
Max Power Dissipation
1.25kW
JESD-609 Kodu
e1
Number Of Elements
1
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Montaj Tipi
Through Hole
Montaj
Through Hole
Gateemitter Thr Voltagemax
5V
Kılıf / Paket
TO-247-3
Collector Emitter Voltage Vceo
2.05V
Turn On Time
109 ns
Max Collector Current
260A
Gate Charge
340nC
Case Connection
COLLECTOR
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Polaritychannel Type
N-CHANNEL
Kurşunsuz Kodu
yes
Operating Temperature Max
150°C
Vceon Max Vge Ic
2.05V @ 15V, 82A
Additional Feature
LOW CONDUCTION LOSS
Test Conditions
600V, 80A, 2 Ω, 15V
Power Max
1250W

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