Volume pricing
- 1+ pcs$16.58
- 10+ pcs$15.64
- 100+ pcs$14.75
- 500+ pcs$13.92
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Igbt Type
- PT
- Additional Feature
- ULTRA FAST, LOW CONDUCTION LOSS
- Qualification Status
- Not Qualified
- Mounting
- Through Hole
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Reverse Recovery Time
- 200 ns
- Tab
- Tab
- Maximum Collectoremitter Voltage V
- 1200
- Maximum Gate Emitter Voltage V
- ±20
- Turn On Time
- 70 ns
- Collector Emitter Voltage Vceo
- 2.3V
- Yayın Yılı
- 2012
- Vceon Max Vge Ic
- 2.3V @ 15V, 55A
- Operating Temperature Max
- 150°C
- Kurşunsuz Kodu
- yes
- Case Connection
- COLLECTOR
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- JESD-609 Kodu
- e1
- Max Power Dissipation
- 460W
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Automotive
- No
- Maximum Gate Emitter Leakage Current Ua
- 0.1
- Gateemitter Thr Voltagemax
- 5V
- Channel Type
- N
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 8 Weeks
- Maximum Power Dissipation Mw
- 460000
- Ppap
- No
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Package Length
- 16.13(Max)
- Jesd30 Code
- R-PSIP-T3
- Switching Energy
- 5.1mJ (on), 13.3mJ (off)
- Current Collector Pulsed Icm
- 400A
- Transistor Application
- POWER CONTROL
- Maximum Continuous Collector Current A
- 125
- Transistor Element Material
- SILICON
- Gateemitter Voltagemax
- 20V
- Td Onoff25c
- 23ns/365ns
- Terminal Sayısı
- 3
- Power Max
- 460W
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