IXGX50N120C3H1

Specifications

Gateemitter Thr Voltagemax

5V

Channel Type

N

Fabrika Tedarik Süresi

8 Weeks

Number Of Elements

1

Max Power Dissipation

460W

JESD-609 Kodu

e1

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Maximum Gate Emitter Leakage Current Ua

0.1

Automotive

No

Maximum Continuous Collector Current A

95

Transistor Element Material

SILICON

Terminal Sayısı

3

Td Onoff25c

31ns/123ns

Gateemitter Voltagemax

20V

Maks. Çalışma Sıcaklığı

+ 150 C

Maximum Power Dissipation Mw

460

Ppap

No

Nem Hassasiyeti (MSL)

1 (Unlimited)

Package Length

16.13(Max)

Switching Energy

2mJ (on), 630μJ (off)

Jesd30 Code

R-PSIP-T3

Transistor Application

POWER CONTROL

Current Collector Pulsed Icm

240A

Qualification Status

Not Qualified

Mounting

Through Hole

Tab

Tab

Reverse Recovery Time

75 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Collectoremitter Saturation Voltage

2.6 V

Igbt Type

PT

Additional Feature

LOW CONDUCTION LOSS

Kurşunsuz Kodu

yes

Vceon Max Vge Ic

4.2V @ 15V, 40A

Yayın Yılı

2012

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Case Connection

COLLECTOR

Maximum Gate Emitter Voltage V

±20

Maximum Collectoremitter Voltage V

1200

Turn On Time

60 ns