Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Channel Type
- N
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 8 Weeks
- Max Power Dissipation
- 350W
- JESD-609 Kodu
- e1
- Configuration
- Single
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Maximum Gate Emitter Leakage Current Ua
- 0.1
- Automotive
- No
- Maximum Continuous Collector Current A
- 32
- Transistor Element Material
- SILICON
- Td Onoff25c
- 27ns/270ns
- Terminal Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ppap
- No
- Maximum Power Dissipation Mw
- 350
- Package Length
- 16.13(Max)
- Switching Energy
- 4.1mJ (on), 1.25mJ (off)
- Current Collector Pulsed Icm
- 110A
- Transistor Application
- POWER CONTROL
- Qualification Status
- Not Qualified
- Mounting
- Through Hole
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Reverse Recovery Time
- 150 ns
- Collectoremitter Saturation Voltage
- 4V
- Tab
- Tab
- Igbt Type
- NPT
- Yayın Yılı
- 2004
- Kurşunsuz Kodu
- yes
- Vceon Max Vge Ic
- 5V @ 15V, 21A
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Case Connection
- COLLECTOR
- Maximum Collectoremitter Voltage V
- 1700
- Maximum Gate Emitter Voltage V
- ±20
- Turn On Time
- 74 ns
- Collector Emitter Voltage Vceo
- 1.7kV
- Montaj
- Through Hole
- Temel Parça No
- IXG*32N170
- Eu Rohs
- Compliant with Exemption
- Montaj Tipi
- Through Hole
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