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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Seri
- GenX3™
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Max Power Dissipation
- 300W
- JESD-609 Kodu
- e1
- Terminal Pozisyonu
- SINGLE
- Ambalaj
- Tube
- Montaj
- Through Hole
- Gateemitter Thr Voltagemax
- 5V
- Fabrika Tedarik Süresi
- 20 Weeks
- Number Of Elements
- 1
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- POWER CONTROL
- Current Collector Pulsed Icm
- 150A
- Jesd30 Code
- R-PSIP-T3
- Switching Energy
- 3.6mJ (on), 3.9mJ (off)
- Turn Off Timenom Toff
- 915 ns
- Collectoremitter Breakdown Voltage
- 1.4kV
- Giriş Tipi
- Standard
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- Parça Durumu
- Obsolete
- Td Onoff25c
- 16ns/190ns
- RoHS Durumu
- RoHS Compliant
- Gateemitter Voltagemax
- 20V
- Transistor Element Material
- SILICON
- Power Max
- 300W
- Test Conditions
- 960V, 28A, 5 Ω, 15V
- Qualification Status
- Not Qualified
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Reverse Recovery Time
- 350 ns
- Voltage Collector Emitter Breakdown Max
- 1400V
- Turn On Time
- 66 ns
- Max Collector Current
- 60A
- Gate Charge
- 88nC
- Collector Emitter Voltage Vceo
- 3.6V
- Kılıf / Paket
- TO-247-3
- Vceon Max Vge Ic
- 3.6V @ 15V, 28A
- Operating Temperature Max
- 150°C
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