Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Max Power Dissipation
- 660W
- JESD-609 Kodu
- e1
- Number Of Elements
- 1
- Gateemitter Thr Voltagemax
- 5.5V
- Current Collector Pulsed Icm
- 300A
- Transistor Application
- POWER CONTROL
- Switching Energy
- 2.4mJ (on), 5.5mJ (off)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Td Onoff25c
- 60ns/200ns
- Gateemitter Voltagemax
- 20V
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Turn Off Delay Time
- 200 ns
- Igbt Type
- PT
- Collectoremitter Saturation Voltage
- 2.1V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Qualification Status
- Not Qualified
- Akım Değeri
- 200A
- Collector Emitter Voltage Vceo
- 600V
- Turn On Time
- 120 ns
- Case Connection
- COLLECTOR
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Yayın Yılı
- 2004
- Kurşunsuz Kodu
- yes
- Vceon Max Vge Ic
- 2.1V @ 15V, 120A
- Ambalaj
- Bulk
- Power Dissipation
- 660W
- Seri
- HiPerFAST™
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Pin Sayısı
- 3
- Montaj Tipi
- Through Hole
- Montaj
- Through Hole
- Temel Parça No
- IXG*120N60
- Voltage Rated Dc
- 600V
- Rise Time
- 45ns
- RoHS Durumu
- RoHS Compliant
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 3
- Parça Durumu
- Obsolete
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