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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- POWER CONTROL
- Current Collector Pulsed Icm
- 200A
- Switching Energy
- 200μJ (off)
- Jesd30 Code
- R-PSSO-G2
- Turn Off Timenom Toff
- 210 ns
- Collectoremitter Breakdown Voltage
- 600V
- Giriş Tipi
- Standard
- Parça Durumu
- Obsolete
- Pin Sayısı
- 4
- Terminal Sayısı
- 2
- Td Onoff25c
- 18ns/90ns
- RoHS Durumu
- RoHS Compliant
- Gateemitter Voltagemax
- 20V
- Transistor Element Material
- SILICON
- Seri
- HiPerFAST™
- Max Power Dissipation
- 300W
- JESD-609 Kodu
- e3
- Ambalaj
- Tube
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Temel Parça No
- IXG*40N60
- Montaj
- Surface Mount
- Terminal Formu
- GULL WING
- Gateemitter Thr Voltagemax
- 5V
- Number Of Elements
- 1
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Montaj Tipi
- Surface Mount
- Turn On Time
- 38 ns
- Max Collector Current
- 75A
- Gate Charge
- 95nC
- Kılıf / Paket
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Collector Emitter Voltage Vceo
- 600V
- Kurşunsuz Kodu
- yes
- Vceon Max Vge Ic
- 2.7V @ 15V, 30A
- Yayın Yılı
- 2010
- Case Connection
- COLLECTOR
- Terminal Kaplaması
- Matte Tin (Sn)
- Polaritychannel Type
- N-CHANNEL
- Power Max
- 300W
- Igbt Type
- PT
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