Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Qualification Status
- Not Qualified
- Reverse Recovery Time
- 100 ns
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Weight
- 4.500005g
- Igbt Type
- PT
- Yayın Yılı
- 2008
- Genişlik
- 14mm
- Kurşunsuz Kodu
- yes
- Vceon Max Vge Ic
- 3.5V @ 15V, 40A
- Case Connection
- COLLECTOR
- Terminal Kaplaması
- PURE TIN
- Turn On Time
- 79 ns
- Collector Emitter Voltage Vceo
- 1.2kV
- Terminal Formu
- GULL WING
- Gateemitter Thr Voltagemax
- 5V
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 8 Weeks
- JESD-609 Kodu
- e3
- REACH Uyumluluk Kodu
- unknown
- Max Power Dissipation
- 380W
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gateemitter Voltagemax
- 20V
- Td Onoff25c
- 21ns/290ns
- Terminal Sayısı
- 2
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Current Collector Pulsed Icm
- 200A
- Transistor Application
- POWER CONTROL
- Uzunluk
- 16.05mm
- Jesd30 Code
- R-PSSO-G2
- Switching Energy
- 4.5mJ (on), 3mJ (off)
- Yükseklik
- 5.1mm
- Voltage Collector Emitter Breakdown Max
- 1200V
- Element Configuration
- Single
- Power Max
- 380W
- Test Conditions
- 960V, 40A, 2 Ω, 15V
- Polaritychannel Type
- N-CHANNEL
- Gate Charge
- 138nC
- Max Collector Current
- 75A
- Fall Timemax Tf
- 270ns
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