IXGT32N170

Specifications

Igbt Type

NPT

Technology

Si

Maximum Gate Emitter Voltage

- 20 V, + 20 V

Tab

Tab

Collectoremitter Saturation Voltage

2.5V

Mounting

Surface Mount

Weight

4.500005g

Turn On Time

90 ns

Maximum Collectoremitter Voltage V

1700

Maximum Gate Emitter Voltage V

±20

Collector Emitter Voltage Vceo

1.7kV

Collector Emitter Voltage Vceo Max

1.7 kV

Pd Power Dissipation

350 W

Vceon Max Vge Ic

3.3V @ 15V, 32A

Kurşunsuz Kodu

yes

Yayın Yılı

2003

Case Connection

COLLECTOR

Terminal Kaplaması

Matte Tin (Sn)

JESD-609 Kodu

e3

Max Power Dissipation

350W

Configuration

Single

Automotive

No

Maximum Gate Emitter Leakage Current Ua

0.1

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Formu

GULL WING

Fabrika Tedarik Süresi

24 Weeks

Number Of Elements

1

Channel Type

N

Package Length

16.05(Max)

Maximum Power Dissipation Mw

350

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ppap

No

Transistor Application

MOTOR CONTROL

Current Collector Pulsed Icm

200A

Switching Energy

11mJ (off)

Jesd30 Code

R-PSSO-G2

Maximum Continuous Collector Current A

75

Terminal Sayısı

2

Maks. Çalışma Sıcaklığı

+ 150 C

Td Onoff25c

45ns/270ns