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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Igbt Type
- NPT
- Qualification Status
- Not Qualified
- Collectoremitter Saturation Voltage
- 2.7V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Weight
- 4.500005g
- Turn On Time
- 90 ns
- Collector Emitter Voltage Vceo
- 1.7kV
- Yayın Yılı
- 2006
- Kurşunsuz Kodu
- yes
- Vceon Max Vge Ic
- 3.5V @ 15V, 16A
- Case Connection
- COLLECTOR
- Terminal Kaplaması
- Matte Tin (Sn)
- JESD-609 Kodu
- e3
- REACH Uyumluluk Kodu
- not_compliant
- Max Power Dissipation
- 190W
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gateemitter Thr Voltagemax
- 5V
- Terminal Formu
- THROUGH-HOLE
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 24 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Current Collector Pulsed Icm
- 80A
- Transistor Application
- POWER CONTROL
- Jesd30 Code
- R-PSFM-T3
- Switching Energy
- 9.3mJ (off)
- Gateemitter Voltagemax
- 20V
- Td Onoff25c
- 45ns/400ns
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Element Configuration
- Single
- Test Conditions
- 1360V, 16A, 10 Ω, 15V
- Voltage Collector Emitter Breakdown Max
- 1700V
- Gate Charge
- 78nC
- Max Collector Current
- 32A
- Kılıf / Paket
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Fall Timemax Tf
- 1100ns
- Polaritychannel Type
- N-CHANNEL
- Ambalaj
- Tube
- Power Dissipation
- 190W
- Montaj
- Surface Mount
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